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Their process is called 38 Advance Materials Development and Applied Mechanics “constructive destruction,” which includes the automatic destruction of defective nanotubes on the wafer. This process, however, only gives control over the electrical properties on a statistical scale. The potential of carbon nanotubes was demonstrated in 2003 when room-temperature ballistic transistors with ohmic metal contacts and high-k gate dielectric were reported, showing 20–30x higher ON current than state-of-the-art Si MOSFETs.

19(2004) 3-20. [3] J. S. Field, and M. V. Swain, A simple predictive model for spherical indentation, J. Mater. , 8(1993) 297-306. [4] J. S. Field, and M. V. Swain, Determining the mechanical properties of small volumes of material from submicrometer spherical indentations, J. Mater. , 10(1994) 101-111. -T. -M. , J. Mater. , 14(1999) 3493-3496. [6] R. Nowak, M. , Elastic and plastic properties of GaN determined by nano-indentation of bulk crystal, Applied Physics Letters, 75(1999) 14(1999) 2070-2072.

15] R. -G. Fatt, I. Ihara, T. Yudate, M. Ichimura, J. Uegaki, and Y. Shima, Microscopic Determination of Stress-strain Relationship by Continuous Multiple Nano-indentation Technique, Proc. of the 3rd JSME/ASME International Conference on Materials and Processing, Corvallis, Oregon, USA, 2011, ICMP2011-51147. -G. Fatt, and I. Ihara, Quantitative Evaluation of Stress-Strain Curves by Spherical-Tip Nanoindentation with Variable Radius Method, Journal of Solid Mechanics and Materials Engineering, 7(2012) 155-162.

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